48 GHz Power Amplifier for mm-wave LO Distribution Circuitry in 90 nm CMOS
نویسندگان
چکیده
—A 48 GHz fully integrated two stages power amplifier (PA) for mm-wave application is presented in this paper. The PA is implemented in 90 nm LP CMOS technology with Cascode topology to enhance gain and stability. The single ended PA achieves around 15 dB small signal gain, 4.5 dBm saturated output power and a peak power added efficiency of 9% in measurement. Patterned ground shield coplanar transmission lines, integrated spiral inductors and MIM-capacitors are used for matching and biasing purpose. Matching networks are optimized in order to achieve a wideband operation, resulting in 3dB-gain bandwidth from 46 GHz to 56 GHz in the measurement. The overall chip size is 0.54 mm 2 including the pads.
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